Qian He Professor

Qian He, professor of the School of Integrated Circuit, Tsinghua University. He received his Ph D degree from Xi’an Jiaotong University in 1990. From Dec. 1990 to May 2006, he worked for Institute of Microelectronics, Chinese Academy of Science, and during that from Sept. 2001 to May 2006, he was the director of the institute. Then, he transfered to Samsung Semiconductor R&D Center in China, as the director of the center. On Jan. 2009, he joined Tsinghua University.

During in Institute of Microelectronics Chinese Academy of Science, he worked on technology developing of bulk and SOI Si CMOS, GaN microwave power devices. He received a lot of awards including the national second prize of invention, the Beijing’s first prize of technical progress, the Chinese Academy of Science’s second prize of technical progress, the national allowance etc. During in Samsung Semiconductor R&D Center in China, he took in charge of solution developing of smart phone and other mobile terminals based on Samsung’s ICs. After join in Tsinghua University, he gave lectures of “manufacture process of Si CMOS integrated circuits” and “guide to modern semiconductor devices”. About research field, he focused on resistive random access memory (RRAM) and its applications including embedded nonvolatile memory, hardware security and computing in memory.